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Dharmarasu, N.*; Yamaguchi, Masafumi*; Khan, A.*; Yamada, Takashi*; Tanabe, Tatsuya*; Takagishi, Shigenori*; Takamoto, Tatsuya*; Oshima, Takeshi; Ito, Hisayoshi; Imaizumi, Mitsuru*; et al.
Applied Physics Letters, 79(15), p.2399 - 2401, 2001/10
Times Cited Count:75 Percentile:90.93(Physics, Applied)The radiation response of 3MeV proton-irradiated InGaP, InGaAsP, and InGaAs solar cells was measured and analyzed in comparison with those of InP and GaAs. The degradation of the minority-carrier diffusion length was estimated from the spectral response. The damage coefficient K for 3MeV proton-irradiated InGaP, InGaAsP and InGaAs was also determined. The radiation resistance increases with increase in the function of In-P bonds in those materials. Minority-carrier injection under forward bias is found to cause partial recovery of the degradation on irradiated InGaP and InGaAsP cells.